N25W064A11EF640F TR vs N25W064A11EF640E

This detailed comparison of N25W064A11EF640F TR and N25W064A11EF640E in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

N25W064A11EF640F TR

N25W064A11EF640F TR

Micron Technology

N25W064A11EF640E

N25W064A11EF640E

Micron Technology

Specifications
Manufacturer Micron Technology Micron Technology
Package / Case 8-VDFN Exposed Pad 8-VDFN Exposed Pad
Description IC FLSH 64MBIT SPI 108MHZ 8VDFPN IC FLSH 64MBIT SPI 108MHZ 8VDFPN
In Stock 701 732
Mounting Type Surface Mount Surface Mount
Part Status Obsolete Obsolete
Series - -
Package Tape & Reel (TR) Tray
Memory Type Non-Volatile Non-Volatile
Memory Format FLASH FLASH
Technology FLASH - NOR FLASH - NOR
Memory Size 64Mb (16M x 4) 64Mb (16M x 4)
Memory Interface SPI SPI
Clock Frequency 108 MHz 108 MHz
Write Cycle Time - Word, Page - -
Access Time - -
Voltage - Supply 1.7V ~ 2V 1.7V ~ 2V
Operating Temperature -25°C ~ 85°C (TA) -25°C ~ 85°C (TA)
Supplier Device Package 8-VDFPN (6x5) (MLP8) 8-VDFPN (6x5) (MLP8)
Part Number Manufacturer Description Request For Quote
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AS4C256M16D3LB-12BANTR Alliance Memory, Inc. IC DRAM 4GBIT PARALLEL 96FBGA
IS42S16100F-6BL-TR ISSI (Integrated Silicon Solution, Inc.) IC DRAM 16MBIT PARALLEL 60TFBGA
IS42S32400B-7TLI ISSI (Integrated Silicon Solution, Inc.) IC DRAM 128MBIT PAR 86TSOP II
IS42S32200E-6TL-TR ISSI (Integrated Silicon Solution, Inc.) IC DRAM 64MBIT PAR 86TSOP II
IDT71V65802S150BGG Renesas Electronics America IC SRAM 9MBIT PARALLEL 119PBGA
S25FL132K0XMFI040 Cypress Semiconductor IC FLASH 32MBIT SPI/QUAD 8SOIC
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AT24C04N-10SI-2.5 Roving Networks / Microchip Technology IC EEPROM 4KBIT I2C 400KHZ 8SOIC
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