This detailed comparison of TC58CVG0S3HRAIJ and TC58CYG0S3HRAIJ in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Toshiba Memory America, Inc. (Kioxia America, Inc.) | Toshiba Memory America, Inc. (Kioxia America, Inc.) |
|---|---|---|
| Package / Case | 8-WDFN Exposed Pad | 8-WDFN Exposed Pad |
| Description | IC FLASH 1GBIT SPI 133MHZ 8WSON | IC FLASH 1GBIT SPI 133MHZ 8WSON |
| In Stock | 5 000 | 1 474 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Active | Active |
| Series | - | - |
| Package | Tray | Tray |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | FLASH | FLASH |
| Technology | FLASH - NAND (SLC) | FLASH - NAND (SLC) |
| Memory Size | 1Gb (128M x 8) | 1Gb (128M x 8) |
| Memory Interface | SPI | SPI |
| Clock Frequency | 133 MHz | 133 MHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | 180 µs | 180 µs |
| Voltage - Supply | 2.7V ~ 3.6V | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C | -40°C ~ 85°C |
| Supplier Device Package | 8-WSON (6x8) | 8-WSON (6x8) |
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|---|---|---|---|
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| MT44K64M18RCT-125E:A TR | Micron Technology | IC RLDRAM 1.125GBIT TBGA |
|
