This detailed comparison of W632GU6NB11J and W632GU6NB12J in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Winbond Electronics Corporation | Winbond Electronics Corporation |
|---|---|---|
| Package / Case | 96-VFBGA | 96-VFBGA |
| Description | IC DRAM 2GBIT PARALLEL 96VFBGA | IC DRAM 2GBIT PARALLEL 96VFBGA |
| In Stock | 1 906 | 7 508 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Active | Active |
| Series | - | - |
| Package | Tray | Tray |
| Memory Type | Volatile | Volatile |
| Memory Format | DRAM | DRAM |
| Technology | SDRAM - DDR3L | SDRAM - DDR3L |
| Memory Size | 2Gb (128M x 16) | 2Gb (128M x 16) |
| Memory Interface | Parallel | Parallel |
| Clock Frequency | 933 MHz | 800 MHz |
| Write Cycle Time - Word, Page | 15ns | 15ns |
| Access Time | 20 ns | 20 ns |
| Voltage - Supply | 1.283V ~ 1.45V | 1.283V ~ 1.45V |
| Operating Temperature | -40°C ~ 105°C (TC) | -40°C ~ 105°C (TC) |
| Supplier Device Package | 96-VFBGA (7.5x13) | 96-VFBGA (7.5x13) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
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|
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| IDT71024S12Y | Renesas Electronics America | IC SRAM 1MBIT PARALLEL 32SOJ |
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| AT28HC256F-12TA | Roving Networks / Microchip Technology | IC EEPROM 256KBIT PAR 28TSOP |
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| PC48F4400P0VB0EH | Micron Technology | IC FLASH 512MBIT PAR 64EASYBGA |
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| CAT28F010GI12 | Sanyo Semiconductor/ON Semiconductor | IC FLASH 1MBIT PARALLEL 32PLCC |
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| AT49F001AN-55TU | Roving Networks / Microchip Technology | IC FLASH 1MBIT PARALLEL 32TSOP |
|
