RN1709JE(TE85L,F)

Part No :: RN1709JE(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

VIGOR # :: 2983659

Description: NPN X 2 BRT, Q1BSR=47KΩ, Q1BER=2

Catalog: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DataSheet: RN1709JE(TE85L,F) PDF

Country of origin: -

Date code: -

RN1709JE(TE85L,F) Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47kOhms
Resistor - Emitter Base (R2):	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SOT-553
Supplier Device Package:	ESV

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In Stock: 3873

Shipped from

HK warehouse

Expected Shipping Date

Jan 11 - Jan 15 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.41~~	~~$0.41~~

Current price of RN1709JE(TE85L,F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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RN1709JE(TE85L,F)

RN1709JE(TE85L,F)

2983659

Pricing(USD)