RN4987FE,LF(CT

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Part No :

RN4987FE,LF(CT

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS NPN/PNP PREBIAS 0.1W ES6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Oct 02 - Oct 06 2025
DataSheet
RN4987FE,LF(CT PDF
Availability
5388 pieces
Unit Price
$0.28000

Current price of RN4987FE,LF(CT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz, 200MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
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  • Delivery date: usually 2 to 7 working days.
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