Part No :

RN1963FE(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
VIGOR # :

2984350

Description
TRANS 2NPN PREBIAS 0.1W ES6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
DataSheet
RN1963FE(TE85L,F) PDF
Country of origin
-
Date code
-
ads
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Feb 04 - Feb 08 2026
Pricing(USD)
Quantity Unit Price Ext. Price
1 $0.10 $0.10

Current price of RN1963FE(TE85L,F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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