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Discrete Semiconductor

RN1971FE(TE85L,F)

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Part No :

RN1971FE(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
VIGOR # :

4619209

Description
TRANS 2NPN PREBIAS 0.1W ES6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
DataSheet
RN1971FE(TE85L,F) PDF
Country of origin
Confirming
Date code
TBC
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RN1971FE(TE85L,F) Specifications
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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In Stock: Available on Request ?
Shipped from
HK warehouse
Expected Shipping Date
Awaiting confirmation
Pricing(USD)
Quantity Unit Price Ext. Price

Current price of RN1971FE(TE85L,F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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