MT3S111TU,LF

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Part No :

MT3S111TU,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF SIGE NPN BIPOLAR TRANSISTOR N
Catalog
Transistors - Bipolar (BJT) - RF
Shipped from
HK warehouse
Expected Shipping Date
Oct 06 - Oct 10 2025
DataSheet
MT3S111TU,LF PDF
Availability
3372 pieces
Unit Price
$0.58000

Current price of MT3S111TU,LF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):6V
Frequency - Transition:10GHz
Noise Figure (dB Typ @ f):0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain:12.5dB
Power - Max:800mW
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, Flat Lead
Supplier Device Package:UFM
  • Please confirm the specifications of the products when ordering.
  • MOQ means the minimum order quantity required to purchase each parts.
  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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