Part No :

MT3S111TU,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF SIGE NPN BIPOLAR TRANSISTOR N
Catalog
Transistors - Bipolar (BJT) - RF
DataSheet
MT3S111TU,LF PDF
Availability
3372 pieces
Unit Price
$0.58000

Current price of MT3S111TU,LF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):6V
Frequency - Transition:10GHz
Noise Figure (dB Typ @ f):0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain:12.5dB
Power - Max:800mW
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, Flat Lead
Supplier Device Package:UFM
  • Please confirm the specifications of the products when ordering.
  • MOQ means the minimum order quantity required to purchase each parts.
  • If you have special order instructions,please note it on the ordering pages.
  • The Pre-Shipment Inspection (PSI) will be applied.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $0.58000 $0.58
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