RN1110MFV,L3F

Part No :: RN1110MFV,L3F

Manufacturer: Toshiba Electronic Devices and Storage Corporation

VIGOR # :: 2981437

Description: TRANS PREBIAS NPN 50V 0.1A VESM

Catalog: Transistors - Bipolar (BJT) - Single, Pre-Biased

DataSheet: RN1110MFV,L3F PDF

Country of origin: -

Date code: -

RN1110MFV,L3F Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	-
Power - Max:	150 mW
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	VESM

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Nov 08 - Nov 12 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.0293~~	~~$0.03~~
8000	~~$0.0293~~	~~$234.08~~

Current price of RN1110MFV,L3F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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