RN1112(TE85L,F)

Part No :: RN1112(TE85L,F)

Manufacturer: Toshiba Electronic Devices and Storage Corporation

VIGOR # :: 6064839

Description: TRANS PREBIAS NPN 50V 0.1A SSM

Catalog: Transistors - Bipolar (BJT) - Single, Pre-Biased

DataSheet: RN1112(TE85L,F) PDF

Country of origin: -

Date code: -

RN1112(TE85L,F) Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250 MHz
Power - Max:	100 mW
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SSM

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In Stock: 3000

Shipped from

HK warehouse

Expected Shipping Date

Nov 03 - Nov 07 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.2200~~	~~$0.22~~

Current price of RN1112(TE85L,F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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RN1112(TE85L,F)

RN1112(TE85L,F)

6064839

Pricing(USD)