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NJD35N04G

NJD35N04G

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Part No :

NJD35N04G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 350V 4A DPAK
Catalog
Transistors - Bipolar (BJT) - Single
Shipped from
HK warehouse
Expected Shipping Date
Oct 16 - Oct 20 2025
DataSheet
NJD35N04G PDF
Availability
0 pieces
Unit Price
$1.00000

Current price of NJD35N04G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NJD35N04G Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 20mA, 2A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 2A, 2V
Power - Max:45 W
Frequency - Transition:90MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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