2N4123

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Part No :

2N4123

Manufacturer
NTE Electronics, Inc.
Description
T-NPN SI- GEN PUR AMP
Catalog
Transistors - Bipolar (BJT) - Single
Shipped from
HK warehouse
Expected Shipping Date
Oct 16 - Oct 20 2025
DataSheet
2N4123 PDF
Availability
7046 pieces
Unit Price
$0.12600

Current price of 2N4123 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Bag
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 2mA, 1V
Power - Max:350 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:TO-92
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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