FDD3510H

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Part No :

FDD3510H

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N/P-CH 80V 4.3/2.8A TO252
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Oct 02 - Oct 06 2025
DataSheet
FDD3510H PDF
Availability
474 pieces
Unit Price
$1.25000

Current price of FDD3510H is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel, Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):80V
Current - Continuous Drain (Id) @ 25°C:4.3A, 2.8A
Rds On (Max) @ Id, Vgs:80mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:800pF @ 40V
Power - Max:1.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package:TO-252-4L
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  • Delivery date: usually 2 to 7 working days.
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