SI7960DP-T1-E3

Part No :: SI7960DP-T1-E3

Manufacturer: Vishay / Siliconix

VIGOR # :: 4617390

Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8

Catalog: Transistors - FETs, MOSFETs - Arrays

DataSheet: SI7960DP-T1-E3 PDF

Country of origin: -

Date code: -

SI7960DP-T1-E3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	6.2A
Rds On (Max) @ Id, Vgs:	21mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	-
Power - Max:	1.4W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	PowerPAK® SO-8 Dual
Supplier Device Package:	PowerPAK® SO-8 Dual

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Feb 02 - Feb 06 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

Current price of SI7960DP-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SI7960DP-T1-E3

SI7960DP-T1-E3

4617390

Pricing(USD)