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SIZ998BDT-T1-GE3

SIZ998BDT-T1-GE3

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Part No :

SIZ998BDT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
DUAL N-CHANNEL 30-V (D-S) MOSFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Oct 07 - Oct 11 2025
DataSheet
SIZ998BDT-T1-GE3 PDF
Availability
35 pieces
Unit Price
$0.98000

Current price of SIZ998BDT-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIZ998BDT-T1-GE3 Specifications
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual), Schottky
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Rds On (Max) @ Id, Vgs:4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V, 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:790pF @ 15V, 2130pF @ 15V
Power - Max:3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerPair™
Supplier Device Package:8-PowerPair™
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