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BSM300D12P3E005

BSM300D12P3E005

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Part No :

BSM300D12P3E005

Manufacturer
ROHM Semiconductor
Description
SILICON CARBIDE POWER MODULE. B
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Oct 04 - Oct 08 2025
DataSheet
BSM300D12P3E005 PDF
Availability
9 pieces
Unit Price
$1371.43000

Current price of BSM300D12P3E005 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSM300D12P3E005 Specifications
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 91mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:14000pF @ 10V
Power - Max:1260W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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