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SISF02DN-T1-GE3

SISF02DN-T1-GE3

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Part No :

SISF02DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET DUAL N-CH 25V 1212-8
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Oct 02 - Oct 06 2025
DataSheet
SISF02DN-T1-GE3 PDF
Availability
45 pieces
Unit Price
$1.63000

Current price of SISF02DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SISF02DN-T1-GE3 Specifications
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Standard
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:30.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs:3.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2650pF @ 10V
Power - Max:5.2W (Ta), 69.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® 1212-8SCD
Supplier Device Package:PowerPAK® 1212-8SCD
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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