
| Type | Description |
|---|---|
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Rds On (Max) @ Id, Vgs: | 25mOhm @ 100A, 20V |
| Vgs(th) (Max) @ Id: | 5V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs: | 500nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 10200pF @ 800V |
| Power - Max: | 900W |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
| Quantity | Unit Price | Ext. Price |
|---|
Current price of QJD1210011 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com
MOSFET 4N-CH 100V 1A MO-036AB
MOSFET 2P-CH 20V 7.9A FLIP-FET
INTEGRATED CIRCUIT
RES 59K OHM 0.25% 1/10W 0603
RES SMD 66.5 OHM 0.1% 1/10W 0603
CRYSTAL 25.0000MHZ 18PF SMD
MOSFET 2N-CH 1200V 100A SIC