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Type | Description |
---|---|
Series: | GaN |
Package: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 4GHz |
Gain: | 19dB |
Voltage - Test: | 50 V |
Current Rating (Amps): | - |
Noise Figure: | - |
Current - Test: | 500 mA |
Power - Output: | 320W |
Voltage - Rated: | 150 V |
Package / Case: | Die |
Supplier Device Package: | Die |
RES 39.2K OHM 1/4W 0.1% AXIAL
FIXED IND 220UH 530MA 721 MOHM
RF MOSFET HEMT 50V DIE
ALVES ZERO BACKLASH U-JOINT