Part No :

IPD25N06S4L30ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 25A TO252-31
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IPD25N06S4L30ATMA2 PDF
Availability
67 pieces
Unit Price
$0.77000

Current price of IPD25N06S4L30ATMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs:16.3 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1220 pF @ 25 V
FET Feature:-
Power Dissipation (Max):29W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $0.77000 $0.77
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