SIE882DF-T1-GE3

Part No :: SIE882DF-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2893143

Description: MOSFET N-CH 25V 60A 10POLARPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIE882DF-T1-GE3 PDF

Country of origin: -

Date code: -

SIE882DF-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	145 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6400 pF @ 12.5 V
FET Feature:	-
Power Dissipation (Max):	5.2W (Ta), 125W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	10-PolarPAK® (L)
Package / Case:	10-PolarPAK® (L)

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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
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In Stock: 2975

Shipped from

HK warehouse

Expected Shipping Date

Apr 03 - Apr 07 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$2.6300~~	~~$2.63~~
3000	~~$1.2504~~	~~$3 751.17~~
6000	~~$1.2041~~	~~$7 224.48~~

Current price of SIE882DF-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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