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Type | Description |
---|---|
Series: | CoolMOS™ |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 380mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 54 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1460 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO263-3-2 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
FIXED IND 33UH 360MA 1.138 OHM
MOSFET N-CH 600V 11A TO263-3-2
AI,LTE MODEM, EMAIL/TEXT,MODBUS
OWON HSA1000 SERIES HANDHELD SPE