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SISS05DN-T1-GE3

SISS05DN-T1-GE3

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Part No :

SISS05DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 30V 29.4A/108A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Sep 30 - Oct 04 2025
DataSheet
SISS05DN-T1-GE3 PDF
Availability
5901 pieces
Unit Price
$1.32000

Current price of SISS05DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SISS05DN-T1-GE3 Specifications
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:29.4A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:115 nC @ 10 V
Vgs (Max):+16V, -20V
Input Capacitance (Ciss) (Max) @ Vds:4930 pF @ 15 V
FET Feature:-
Power Dissipation (Max):5W (Ta), 65.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S
Package / Case:PowerPAK® 1212-8S
  • Please confirm the specifications of the products when ordering.
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  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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