Part No :

TK10A60W,S4VX

Manufacturer
Toshiba Electronic Devices and Storage Corporation
VIGOR # :

2893699

Description
MOSFET N-CH 600V 9.7A TO220SIS
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
TK10A60W,S4VX PDF
Country of origin
-
Date code
-
ads
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id:3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2025
Pricing(USD)
Quantity Unit Price Ext. Price
1 $2.48 $2.48

Current price of TK10A60W,S4VX is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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