G3R350MT12J

Part No :: G3R350MT12J

Manufacturer: GeneSiC Semiconductor

VIGOR # :: 2894712

Description: SIC MOSFET N-CH 11A TO263-7

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: G3R350MT12J PDF

Country of origin: -

Date code: -

G3R350MT12J Specifications

Type	Description
Series:	G3R™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	15V
Rds On (Max) @ Id, Vgs:	420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id:	2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 15 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	334 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	75W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock: 664

Shipped from

HK warehouse

Expected Shipping Date

Dec 27 - Dec 31 2025

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$5.90~~	~~$5.90~~

Current price of G3R350MT12J is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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G3R350MT12J

G3R350MT12J

2894712

Pricing(USD)