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IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

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Part No :

IPL65R1K0C6SATMA1

Manufacturer
VIGOR
Description
MOSFET N-CH 650V 4.2A THIN-PAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2025
DataSheet
IPL65R1K0C6SATMA1 PDF
Availability
4295 pieces
Unit Price
$0.49000

Current price of IPL65R1K0C6SATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPL65R1K0C6SATMA1 Specifications
Type Description
Series:CoolMOS™ C6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
FET Feature:-
Power Dissipation (Max):34.7W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Thin-PAK (5x6)
Package / Case:8-PowerTDFN
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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