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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Rds On (Max) @ Id, Vgs: | 56mOhm @ 35A, 20V |
Vgs(th) (Max) @ Id: | 4.3V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 106 nC @ 20 V |
Vgs (Max): | +25V, -15V |
Input Capacitance (Ciss) (Max) @ Vds: | 1762 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 319W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-4 |
Package / Case: | TO-247-4 |
TRANS SJT N-CH 1200V 58A TO247-4
CONN HEADER VERT 60POS 2.54MM
CONN PLUG HSG 16POS 3.00MM
FAN AXIAL 40X15MM CR0412HB-D51