Part No :

IPI100N06S3L04XK

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 100A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IPI100N06S3L04XK PDF
Availability
113 pieces
Unit Price
$1.27000

Current price of IPI100N06S3L04XK is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:362 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:17270 pF @ 25 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.27000 $1.27
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