IPB26CN10NGATMA1

Part No :: IPB26CN10NGATMA1

Manufacturer: VIGOR

VIGOR # :: 2895652

Description: MOSFET N-CH 100V 35A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: IPB26CN10NGATMA1 PDF

Country of origin: -

Date code: -

IPB26CN10NGATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Bulk
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:	4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs:	31 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2.07 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	71W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Please confirm the specifications of the products when ordering.
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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
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In Stock: 12000

Shipped from

HK warehouse

Expected Shipping Date

Jan 17 - Jan 21 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.52~~	~~$0.52~~

Current price of IPB26CN10NGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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