SIS888DN-T1-GE3

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Part No :

SIS888DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 150V 20.2A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SIS888DN-T1-GE3 PDF
Availability
3097 pieces
Unit Price
$1.72000

Current price of SIS888DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:ThunderFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:58mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 75 V
FET Feature:-
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Package / Case:PowerPAK® 1212-8S
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.72000 $1.72
3000 $0.80777 $2423.31
6000 $0.76985 $4619.1
15000 $0.74276 $11141.4
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