Part No :

SIHP6N65E-GE3

Manufacturer
Vishay / Siliconix
VIGOR # :

2896042

Description
MOSFET N-CH 650V 7A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SIHP6N65E-GE3 PDF
Country of origin
-
Date code
-
ads
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:820 pF @ 100 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
  • Please confirm the specifications of the products when ordering.
  • MOQ means the minimum order quantity required to purchase each parts.
  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Shipped from
HK warehouse
Expected Shipping Date
Feb 02 - Feb 06 2026
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.12 $1.12
1000 $1.12 $1 116.50

Current price of SIHP6N65E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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