Part No :

IPI076N12N3GAKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 120V 100A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IPI076N12N3GAKSA1 PDF
Availability
0 pieces
Unit Price
$1.95212

Current price of IPI076N12N3GAKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:101 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6640 pF @ 60 V
FET Feature:-
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.95212 $1.95212
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