IPB009N03LGATMA1

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Part No :

IPB009N03LGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 180A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IPB009N03LGATMA1 PDF
Availability
0 pieces
Unit Price
$3.82000

Current price of IPB009N03LGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.95mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:227 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25000 pF @ 15 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
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Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $3.82000 $3.82
1000 $2.01639 $2016.39
2000 $1.91557 $3831.14
5000 $1.84356 $9217.8
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