IPD048N06L3GBTMA1

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Part No :

IPD048N06L3GBTMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 90A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IPD048N06L3GBTMA1 PDF
Availability
0 pieces
Unit Price
$1.34000

Current price of IPD048N06L3GBTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 30 V
FET Feature:-
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.34000 $1.34
2500 $0.59202 $1480.05
5000 $0.56242 $2812.1
12500 $0.54127 $6765.875
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