SIHP33N60E-GE3

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Part No :

SIHP33N60E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 600V 33A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SIHP33N60E-GE3 PDF
Availability
828 pieces
Unit Price
$6.41000

Current price of SIHP33N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3508 pF @ 100 V
FET Feature:-
Power Dissipation (Max):278W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $6.41000 $6.41
10 $5.71984 $57.1984
100 $4.69027 $469.027
500 $3.79797 $1898.985
1000 $3.20311 $3203.11
3000 $3.04295 $9128.85
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