Part No :

TK6Q60W,S1VQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 6.2A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
TK6Q60W,S1VQ PDF
Availability
0 pieces
Unit Price
$1.60880

Current price of TK6Q60W,S1VQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:820mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:3.7V @ 310µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Stub Leads, IPak
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.60880 $1.6088
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