IAUT200N08S5N023ATMA1

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Part No :

IAUT200N08S5N023ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 200A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
IAUT200N08S5N023ATMA1 PDF
Availability
1616 pieces
Unit Price
$5.37000

Current price of IAUT200N08S5N023ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:OptiMOS™-5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7670 pF @ 40 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $5.37000 $5.37
2000 $2.29947 $4598.94
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