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| Type | Description |
|---|---|
| Series: | HEXFET® |
| Package: | Tube |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200 V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 150mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 67 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1160 pF @ 25 V |
| FET Feature: | - |
| Power Dissipation (Max): | 150W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220AB |
| Package / Case: | TO-220-3 |
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $1.05000 | $1.05 |
| 50 | $0.84738 | $42.369 |
| 100 | $0.74763 | $74.763 |
| 500 | $0.59083 | $295.415 |
| 1000 | $0.47682 | $476.82 |
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