SIHB33N60ET1-GE3

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Part No :: SIHB33N60ET1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 600V 33A TO263

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIHB33N60ET1-GE3 PDF

Availability: 715 pieces

Unit Price: ~~$6.47000~~

Current price of SIHB33N60ET1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

SIHB33N60ET1-GE3 Specifications

Type	Description
Series:	E
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	150 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	3508 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	278W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263 (D²Pak)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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