G2R1000MT17J

Part No :: G2R1000MT17J

Manufacturer: GeneSiC Semiconductor

VIGOR # :: 2898967

Description: SIC MOSFET N-CH 3A TO263-7

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: G2R1000MT17J PDF

Country of origin: -

Date code: -

G2R1000MT17J Specifications

Type	Description
Series:	G2R™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1700 V
Current - Continuous Drain (Id) @ 25°C:	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:	4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	139 pF @ 1000 V
FET Feature:	-
Power Dissipation (Max):	54W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock: 6

Shipped from

HK warehouse

Expected Shipping Date

Jan 03 - Jan 07 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$6.17~~	~~$6.17~~

Current price of G2R1000MT17J is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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G2R1000MT17J

G2R1000MT17J

2898967

Pricing(USD)