TK10J80E,S1E

Part No :: TK10J80E,S1E

Manufacturer: Toshiba Electronic Devices and Storage Corporation

VIGOR # :: 2899657

Description: MOSFET N-CH 800V 10A TO3P

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: TK10J80E,S1E PDF

Country of origin: -

Date code: -

TK10J80E,S1E Specifications

Type	Description
Series:	π-MOSVIII
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	46 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	2000 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	250W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3P(N)
Package / Case:	TO-3P-3, SC-65-3

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Apr 02 - Apr 06 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$2.7348~~	~~$2.73~~
25	~~$2.7348~~	~~$68.37~~

Current price of TK10J80E,S1E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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TK10J80E,S1E

TK10J80E,S1E

2899657

Pricing(USD)