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Type | Description |
---|---|
Series: | Automotive, AEC-Q101, HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 14.5mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 74 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3050 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 4.3W (Ta), 125W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8-10 |
Package / Case: | 8-PowerVDFN |
BIT DBL ENDED TORX T10 T15
MOSFET N-CH 100V 58A TDSON-8-10
IC SRAM 4.5MBIT PARALLEL 100TQFP
CONN HDR STRIP POST 15POS GOLD