SIRA50DP-T1-RE3

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Part No :

SIRA50DP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 40V 62.5A/100A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SIRA50DP-T1-RE3 PDF
Availability
6329 pieces
Unit Price
$1.69000

Current price of SIRA50DP-T1-RE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:62.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:194 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:8445 pF @ 20 V
FET Feature:-
Power Dissipation (Max):6.25W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.69000 $1.69
3000 $0.85421 $2562.63
6000 $0.82456 $4947.36
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