SIHU6N62E-GE3

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Part No :

SIHU6N62E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 620V 6A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
SIHU6N62E-GE3 PDF
Availability
2874 pieces
Unit Price
$1.73000

Current price of SIHU6N62E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

Type Description
Series:-
Package:Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:578 pF @ 100 V
FET Feature:-
Power Dissipation (Max):78W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2025
Enter Quantity
Pricing(USD)
Quantity Unit Price Ext. Price
1 $1.73000 $1.73
3000 $0.78097 $2342.91
6000 $0.74430 $4465.8
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