IMBG120R030M1HXTMA1

Part No :: IMBG120R030M1HXTMA1

Manufacturer: IR (Infineon Technologies)

VIGOR # :: 2900676

Description: TRANS SJT N-CH 1.2KV 56A TO263

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: IMBG120R030M1HXTMA1 PDF

Country of origin: -

Date code: -

IMBG120R030M1HXTMA1 Specifications

Type	Description
Series:	CoolSiC™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	1.2 kV
Current - Continuous Drain (Id) @ 25°C:	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	41mOhm @ 25A, 18V
Vgs(th) (Max) @ Id:	5.7V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs:	63 nC @ 18 V
Vgs (Max):	+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds:	2.29 nF @ 800 V
FET Feature:	Standard
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-7-12
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 24 - Jan 28 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$28.34~~	~~$28.34~~

Current price of IMBG120R030M1HXTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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IMBG120R030M1HXTMA1

IMBG120R030M1HXTMA1

2900676

Pricing(USD)