IPI041N12N3GAKSA1

Part No :: IPI041N12N3GAKSA1

Manufacturer: IR (Infineon Technologies)

VIGOR # :: 2900863

Description: MOSFET N-CH 120V 120A TO262-3

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: IPI041N12N3GAKSA1 PDF

Country of origin: -

Date code: -

IPI041N12N3GAKSA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	120 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:	211 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	13800 pF @ 60 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Dec 29 - Jan 02 2025

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$3.45~~	~~$3.45~~
500	~~$3.45~~	~~$1 722.87~~

Current price of IPI041N12N3GAKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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IPI041N12N3GAKSA1

IPI041N12N3GAKSA1

2900863

Pricing(USD)