RQ3E080GNTB

Part No :: RQ3E080GNTB

Manufacturer: ROHM Semiconductor

VIGOR # :: 2901041

Description: MOSFET N-CH 30V 8A 8HSMT

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: RQ3E080GNTB PDF

Country of origin: -

Date code: -

RQ3E080GNTB Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	16.7mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	5.8 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	295 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta), 15W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-HSMT (3.2x3)
Package / Case:	8-PowerVDFN

Please confirm the specifications of the products when ordering.
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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
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In Stock: 611

Shipped from

HK warehouse

Expected Shipping Date

Mar 31 - Apr 04 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.4800~~	~~$0.48~~
3000	~~$0.1291~~	~~$387.39~~
6000	~~$0.1213~~	~~$727.80~~
15000	~~$0.1135~~	~~$1 702.20~~
30000	~~$0.1096~~	~~$3 287.10~~

Current price of RQ3E080GNTB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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Pricing(USD)