SISS50DN-T1-GE3

Part No :: SISS50DN-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2903031

Description: MOSFET N-CH 45V 29.7A/108A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SISS50DN-T1-GE3 PDF

Country of origin: -

Date code: -

SISS50DN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen IV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	45 V
Current - Continuous Drain (Id) @ 25°C:	29.7A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.83mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	70 nC @ 10 V
Vgs (Max):	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:	4000 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	5W (Ta), 65.7W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8S
Package / Case:	PowerPAK® 1212-8S

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In Stock: 5565

Shipped from

HK warehouse

Expected Shipping Date

Jan 28 - Feb 01 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.92~~	~~$0.92~~

Current price of SISS50DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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