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Type | Description |
---|---|
Series: | Automotive, AEC-Q101, HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300 V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 185mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 57 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.34 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 210W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO262-3-901 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
MEMS OSC XO 20.0000MHZ H/LV-CMOS
CUTTER OVAL SLIM
TRANS PNP 80V 6A TO3P
MOSFET N-CH 300V 19A TO262-3-901