SIHP12N65E-GE3

Part No :: SIHP12N65E-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2903646

Description: MOSFET N-CH 650V 12A TO220AB

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIHP12N65E-GE3 PDF

Country of origin: -

Date code: -

SIHP12N65E-GE3 Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	70 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1224 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	156W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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In Stock: 3

Shipped from

HK warehouse

Expected Shipping Date

Apr 05 - Apr 09 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$2.4800~~	~~$2.48~~
10	~~$2.2386~~	~~$22.39~~
100	~~$1.7991~~	~~$179.91~~
500	~~$1.3993~~	~~$699.64~~
1000	~~$1.1594~~	~~$1 159.40~~
3000	~~$1.0794~~	~~$3 238.35~~
5000	~~$1.0395~~	~~$5 197.30~~

Current price of SIHP12N65E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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